GALOGENIDE REFRACTORIES
for isothermal melting, synthesis, high temperature homogenization and casting of chemically active alloys with large contents of titanium, zirconium, hafnium

Galogenide refractories are used for isothermal melting, synthesis, high temperature homogenization and casting of high chemically active melts, possessing amorphous-forming ability, brazing alloys and other melts with the large contents (up to 80%) Ti, Zr, Hf, V, Nb. These alloys do not wet the surfaces of halogenides. The low adhesion of a melt to a refractory takes place. The powder metallurgical techniques make crucibles, pots, forms, covers of thermocouple and cups for a melting, casting, and homogenization of high chemically active alloys.

crucibles, cups, pots

Size: diameter - 10 - 100 mm; height up to 100 mm;
  • isothermal melting, high temperature homogenization of Ti and Zr-containing melts, possessing amorphous-forming ability;
  • synthesis, isothermal melting, casting of brazing alloys with Ti, Zr, V, Nb;
  • investigation of capillary properties melts with Ti, Zr, Hf, V, Nb;
  • research of thermodynamic properties of alloys with Ti, Zr, Hf.
    Operation temperature should not exceed 1350 C


    The high chemically active alloys wet the surface of tradition refractory crucibles (graphite, oxides, nitrides and carbides). The contact angle values of Cu-Ti, Cu-Zr and other similar melts on surface of the most of solids at temperature - 800-1000 C are low - 5-20 ° at contents of "active elements" 5%. Full spreading of these melts and solid substrate corrosion and destroying are observed in these systems at Ti, Zr, Hf concentration - 10-20%. The new refractories have high resistance to corrosion and destroying in a contact to chemically aggressive metal melts with the large contents of Ti, Zr, Hf and are not wet with such melts.

    Melting of chemically aggressive alloy Cu-50% Ti in crucibles out of: а - graphite; б. - Al2O3, д - CaF2 and ingots of 75% Hf-12% Cu-5% Ni-2% Co-6% Al (д), which are made in pots of CaF2

    Authors of development:academician, professor,Y.NAIDICH
    and ph D V.KRASOVSKYY
    3, Krzhyzhanovsky str., 03142, Kyiv, Ukraine
    Phone/fax (38044)424-30-17
    E-mail:naidich@ipms.kiev.ua; vitalkras@ipms.kiev.ua;

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