Studies of the ductile mode of cutting brittle materials (A review)

 

Інститут проблем матеріалознавства ім. І. М. Францевича НАН України , вул. Омеляна Пріцака, 3, Київ, 03142, Україна
ankov@netzero.com
Journal of Superhard Materials: Springer US, 2013, Т.35, #5
https://doi.org/https://doi.org/10.3103/S1063457613050018

Анотація

Theoretical and experimental studies of the ductile mode of cutting brittle materials (semiconductors, ceramics, and glass) have been considered. The ductile mode of cutting has been based on the implementation of high-pressure-induced phase transformations in a material machined that followed by a cutting of a transformed amorphous layer, which makes it possible to avoid cracking. Publications on studies of phase transitions in brittle materials in the course of the indentation, scratching, friction, and cutting have been reviewed. It has been shown that the cutting depth, cutting edge radius of a tool, chip thickness, tool cutting edge inclination, and crystallographic orientation of a material machined and diamond tool as well as a type of lubricoolant are the decisive factors in implementing the ductile mode of cutting


КЕРАМІКА, НАПІВПРОВІДНИКИ, ПЛАСТИЧНИЙ РЕЖИМ РІЗАННЯ, СКЛО, ФАЗОВЕ ПЕРЕТВОРЕННЯ ПРИ ВИСОКОМУ ТИСКУ

Посилання

1. Domnich, V. and Gogotsi, Y., Phase Transformations in Silicon under Contact Loading, Rev. Adv. Mater. Sci., 2002,
vol. 3, pp. 1–36.
2. King, R. F. and Tabor, D., The Strength Properties and Frictional Behavior of Brittle Solids, in Proc. Royal Soc. Lon
don, Series A: Math. Phys. Sci., 1954, vol. 223, pp. 225–238.
3. Huerta, M. and Malkin, S., Grinding of Glass: The Mechanics of the Process, ASME Transactions, 1976, vol. 98,
pp. 459–467.
4. Ngoi, B.K.A. and Sreejith, P.S., Ductile Regime Finish Machining—A Review, Int. J. Adv. Manuf. Technol., 2000,
vol. 16, no. 8, pp. 547–550.
5. Zhong Z.W., Ductile or Partial Ductile Mode Machining of Brittle Materials, ibid., 2003, vol. 21, no. 8, pp. 579–
585.
6. Pei, Z.J., Billingsley, S.R., and Miura S., Grinding Induced Subsurface Cracks in Silicon Wafers, Int. J. Machine
Tools & Manufacture, 1999, vol. 39, no. 7, pp. 1103–1116.
7. Pei, Z.J. and Strasbaugh, A., Fine Grinding of Silicon Wafers, ibid., 2001, vol. 41, no. 5, pp. 659–672.
8. Stephenson, D.J., Surface Integrity Control during the Precision Machining of Brittle Materials, Advances in Tech
nology of Materials and Materials Processing, 2006, vol. 8, no. 1, pp. 13–22.
9. Gogotsi, Y., Baek, C., and Kirscht, F., Raman Microspectroscopy Study of ProcessingInduced Phase Transforma
tions and Residual Stress in Silicon, Semiconductor Science and Technology, 1999, vol. 14, no. 10, pp. 936–944.
10. Koinkar, V.N. and Bhushan, B., Scanning and Transmission Electron Microcopies of SingleCrystal Silicon Micro
worn/Machined Using Atomic Force Microscopy, J. Mater. Research, 1997, vol. 12, no. 12, pp. 3219–3224.
11. Kunz, R.R., Clark, H.R., Nitishin, M., et al., High Resolution Studies of Crystalline Damage Induced by Lapping
and SinglePoint Diamond Machining of Si(100), ibid., 1996, vol. 11, no. 5, pp. 1228–1237.
12. Young, H.T., Liao, H.T., and Huang, H.Y., Surface Integrity of Silicon Wafers in Ultra Precision Machining, Int.
J. Adv. Manuf. Technol., 2006, vol. 29, pp. 372–378.
13. Gridneva, I.V., Milman, Y.V., and Trefilov, V.I., Phase Transition in DiamondStructure Crystals during Hardness
Measurements, Phys. Stat. Sol., 1972, vol. 14, no. 1, pp. 177–182
14. Evans, T. and Sykes, J., Indentation Hardness of Two Types of Diamond in the Temperature Range 1500°C to
1850°C, Phil. Mag., 1974, vol. 29, no. 1, pp. 135–147.
15. Grigor’ev, O.N., Mil’man, Yu.V., and Trefilov, V.I., Special Features of the Deformation Mechanism and Parame
ters of Thermally Activation Motion of Dislocations in Diamond and Boron Nitride, in Elementarnye protsessy plas
ticheskoi deformatsii kristallov (Elementary Processes of Crystals Plastic Deformation), Kiev: Naukova Dumka,
1978, pp. 44–159.
16. Clarke, D.R., Kroll, M.C., Kirchner, P.D., et al., Amorphization and Conductivity of Silicon and Germanium
Induced by Indentation, Phys. Rev. Lett., 1988, vol. 60, no. 21, pp. 2156–2159.
17. Pharr, G.M., Oliver, W.C., and Clarke, D.R., The Mechanical Behavior of Silicon during SmallScale Indentation,
J. Electronic Mater., 1990, vol. 19, no. 9, pp. 881–887.
18. Novikov, N.V., Dub, S.N., Milman, Yu.V., Gridneva, I.V., and Chugunova, S.I., Study of the Semiconductor–
Metal Phase Transformation in Silicon by Nanoindentation, J. Superhard Mater., 1996, vol. 18, no. 3, pp. 32–41.
19. Kailer, A., Nickel, K.G., and Gogotsi, Y.G., Raman Microspectroscopy of Nanocrystalline and Amorphous Phases
in Hardness Indentations, J. Raman Spectroscopy, 1999, vol. 30, no. 10, pp. 939–946.
20. Milman, Yu.V., Chugunova, S.I., Goncharova, I.V., et al., Physics of Deformation and Fracture at Impact Loading
and Penetration, Int. J. Impact Engineering, 2006, vol. 33, nos. 1–12, pp. 452–462.
21. Khayyat, M.M.O., Hasko, D.G., and Chaudhri, M.M., Effect of Sample Temperature on the IndentationInduced
Phase Transitions In Crystalline Silicon, J. Appl. Phys., 2007, vol. 101, no. 8, art. 083515.
22. Mil’man, Yu.V., Phase Transformation under Pressure in Indentation, High Pressure Physics and Technics, 2011,
vol. 21, no. 1, pp. 7–13.
23. Tanikella, B.V., Somasekhar, A.H., Sowers, A.T., et al., Phase Transformations during Microcutting Tests on Sili
con, Appl. Phys. Lett., 1996, vol. 69, no. 19, pp. 2870–2872.
24. Jasinevicius, R.G., Porto, A.J.V., Duduch, J.G., et al., Multiple Phase Silicon in Submicrometer Chips Removed
by Diamond Turning, J. Braz. Soc. Mech. Sci. & Eng., 2005, XXVII, no. 4, pp. 440–448.
25. Gogotsi, Y., Zhou, G.H., Ku, S.S., et al., Raman Microspectroscopy Analysis of PressureInduced Metallization
in Scratching of Silicon, Semiconductor Science and Technology, 2001, vol. 16, no. 5, pp. 345–352.
26. Zhou, M., Ngoi, B.K.A., Zhong, Z.W., and Chin, C.S., Brittle–Ductile Transition in Diamond Cutting of Silicon
Single Crystals, Materials and Manufacturing Processes, 2001, vol. 16, no. 4, pp. 447–460.
27. Patten, J.A., Jacob, J., Bhattacharya, B., et al., Numerical Simulations and Cutting Experiments on Single Point
Diamond Machining of Semiconductors and Ceramics, in Semiconductor Machining at the MicroNano Scale., Yan,
J. and Patten, J., Eds., 2007, pp. 1–36.

28. Wu, H. and Melkote, S.N., Study of DuctiletoBrittle Transition in Single Grit Diamond Scribing of Silicon:
Application to Wire Sawing of Silicon Wafers, J. Engineering Mater. and Technology, 2012, vol. 134, no. 4,
art. 041011.
29. Wu, H. and Melkote, S., Effect of Crystallographic Orientation on Ductile Scribing of Crystalline Silicon: Role of
Phase Transformation and Slip, Materials Science and Engineering, A, 2012, vol. 549, pp. 200–205.
30. Zhao, X.Z. and Bhushan, B., Material Removal Mechanisms of SingleCrystal Silicon on Nanoscale and at
Ultralow Loads, Wear, 1998, vol. 223, no. 1–2, pp. 66–78.
31. Youn, S.W. and Kang, C.G., A Study of Nanoscratch Experiments of the Silicon and Borosilicate in Air, Materials
Science and Engineering, A, 2004, vol. 384, no. 1–2, pp. 275–283.
32. Koshimizu, S. and Otsuka, J., Detection of Ductile to Brittle Transition in Microindentation and Microscratching
of Single Crystal Silicon Using Acoustic Emission, Machining Science and Technology, 2001, vol. 5, no. 1, pp. 101–
114.
33. Bhattacharya, B., Patten, J., and Jacob, J., Ductile to Brittle Transition Depths for CVD Silicon Carbide and
Quartz, Int. J. Machining and Machinability of Materials, 2007, vol. 2, no. 1, pp. 17–36.
34. Dong, L., Patten, J.A., and Miller, J.A., Insitu Infrared Detection and Heating of Metallic Phase of Silicon during
Scratching Test, Int. J. Manufacturing Technology and Management, 2005, vol. 7, no. 5–6, pp. 530–539.
35. Li, X.C., Lu, J.J., Wan, Z., et al., A Simple Approach to Fabricate Amorphous Silicon Pattern on Single Crystal Sil
icon, Tribology International, 2007, vol. 40, no. 2, pp. 360–364.
36. Park, J.W., Lee, S.S., So, B.S., et al., Characteristics of Mask Layer on (100) Silicon Induced by TriboNanolithog
raphy with Diamond Tip Cantilevers Based on AFM, J. Materials Processing Technology, 2007, vol. 187, pp. 321–
325.
37. Yu, B., Dong, H., Qian, L., et al., FrictionInduced Nanofabrication on Monocrystalline Silicon, Nanotechnology,
2009, vol. 20, no. 46, art. 465303.
38. AbdelAal, H.A., Patten, J.A., and Dong, L., On the Thermal Aspects of Ductile Regime MicroScratching of Sin
gleCrystal Silicon for NEMS/MEMS Applications, Wear, 2005, vol. 259, nos. 7–12, pp. 1343–1351.
39. AbdelAal, H.A., Reyes, Y., Patten, J.A., et al., Extending Electrical Resistivity Measurements in MicroScratching
of Silicon to Determine Thermal Conductivity of the Metallic Phase SiII, Materials Characterization, 2006, vol. 57,
no. 4–5, pp. 281–289.
40. Chung, K.H., Lee, Y.H., and Kim, D.E. Characteristics of Fracture during the Approach Process and Wear Mech
anism of a Silicon AFM Tip, Ultramicroscopy, 2005, vol. 102, no. 2, pp. 161–171.
41. Kim, H.J., Oh, T.S., and Kim, D.E., Comparison of Indentation and Scribing Behaviors of Crystalline and Initially
Deformed Silicon Tips by Molecular Dynamics Simulation, IEEE Transactions on Magnetics, 2009, vol. 45, no. 5,
pp. 2328–2331.
42. Brinksmeier, E., Preub, W., Riemer, O., and Malz, R., Ductile to Brittle Transition Investigated by PlungeCut
Experiments in Monocrystalline Silicon, in Proc. ASPE 1998 Spring Topical Meeting, vol. 17, pp. 55–58.
43. Kovalchenko, A., Gogotsi, Y., Domnich, V., and Erdemir, A., Phase Transformation in Silicon under Dry and
Lubricated Sliding, Tribology Transaction, 2002, vol. 45, no. 3, pp. 372–380.
44. Li, X.C., Lu, J.J., and Yang, S., Tribological Behavior and Phase Transformation of SingleCrystal Silicon in Air,
Tribology International, 2008, vol. 41, no. 3, pp. 189–194.
45. Li, X., Lu, J., and Yang, S., Effect of Lubricant on TriboInduced Phase Transformation of Si, Tribology Letters,
2006, vol. 24, no. 1, pp. 61–66.
46. Danyluk, S. and Reaves, R., Influence of Fluids on the Abrasion of Silicon by Diamond, Wear, 1982, vol. 77, no. 1,
pp. 81–87.
47. Li, X.C., Lu, J.J., Yang. S., et al., Effect of Counterpart on the Tribological Behavior and TriboInduced Phase
Transformation of Si, Tribology International, 2009, vol. 42, no. 5, pp. 628–633.
48. Cai, M.B., Li, X.P., Rahman M, HighPressure Phase Transformation as the Mechanism of Ductile Chip Forma
tion in Nanoscale Cutting of Silicon Wafer, Proc. Institution of Mechanical Engineers, Part B, 2007, vol. 221,
pp. 1511–1519.
49. Han, X.S., Hu, Y.Z., Yu, S., Molecular Dynamics Analysis MicroMechanism of Ductile Machining Single Crystal
Silicon by Means of Nanometric Cutting Technology, J. Appl. Phys., 2008, vol. 42, no. 3, pp. 255–262.
50. Tang, Q. H. and Chen, F.H., MD Simulation of Phase Transformations due to Nanoscale Cutting on Silicon
Monocrystals with Diamond Tip, J. Phys. DAppl. Phys., 2006, vol. 39, no. 16, pp. 3674–3679.
51. Tang, Y.L., Liang, Y.C., Huo, D.H., et al., Study on Nanometric Machining Process of Monocrystalline Si,
Advances in Machining and Manufacturing Technology VIII, 2006, vol. 315–316, pp. 792–795.
52. Wu, H., Lin, B., Yu, S.Y., et al., Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of
SingleCrystal Silicon, Advances in Materials Manufacturing Science and Technology, 2004, vols. 471–472, pp. 144–
148.
53. Liu, K. and Liu, X.D., DuctileMode Cutting of Brittle Materials for Wafer Fabrication. Technical Report, Singapore:
Singapore Institute of Manufacturing Technology, 2004, pp. 101–106.

54. Jasinevicius, R.G., Influence of Cutting Conditions Scaling in the Machining of Semiconductors Crystals with Sin
gle Point Diamond Tool, J. Mater. Processing Technology, 2006, vol. 179, no. 1–3, pp. 111–116.
55. Jasinevicius, R.G., dos Santos, F.J., Pizani P. S., et al., Surface Amorphization in Diamond Turning of Silicon Crys
tal Investigated by Transmission Electron Microscopy, J. NonCrystalline Solids, 2000, vol. 272, no. 2–3, pp. 174–
178.
56. Tanaka, H., Shimada, S., and Ikawa, N., Brittle–Ductile Transition in Monocrystalline Silicon Analyzed by Molec
ular Dynamics Simulation, in Proc. Instn. Mech. Engrs. Part C, 2004, vol. 218, no. 6, pp. 582–590.
57. Tanaka, H., Shimada, S., and Anthony, L., Requirements for DuctileMode Machining Based on Deformation
Analysis of MonoCrystalline Silicon by Molecular Dynamics Simulation, CIRP Annals, 2007, vol. 56, no. 1,
pp. 53–56.
58. Cai, M., Li, X., and Rahman, M., Molecular Dynamics Modeling and Simulation of Nanoscale Ductile Cutting of
Silicon, Int. J. Computer Applications in Technology, 2007, vol. 28, no. 1, pp. 2–8.
59. Hung, N.P. and Fu Y.Q., Effect of Crystalline Orientation in the DuctileRegime Machining of Silicon, Int. J.
Advanced Manufacturing Technology, 2000, vol. 16, no. 12, pp. 871–876.
60. Arefin, S., Li, X.P., Cai, M.B.,et al., The Effect of the Cutting Edge Radius on a Machined Surface in the Nanoscale
Ductile Mode Cutting of Silicon Wafer, in Proc. Institution Mechanical Engineers, Part B, 2007, vol. 221, no. 2,
pp. 213–220.
61. Arefin, S., Li, X.P., Rahman M., .et al., The Upper Bound of Tool Edge Radius for Nanoscale Ductile Mode Cutting
of Silicon Wafers, Int. J. Advanced Manufacturing Technology, 2007, vol. 31, no. 7–8, pp. 655–662.
62. Cai, M.B., Li, X.P., and Rahman, M., Study of the Mechanism of Nanoscale Ductile Mode Cutting of Silicon
Using Molecular Dynamics Simulation, Int. J. Machine Tools & Manufacture, 2007, vol. 47, no. 1, pp. 75–80.
63. Cai, M.B., Li, X.P., Rahman, M., et al., Crack Initiation in Relation to the Tool Edge Radius and Cutting Condi
tions in Nanoscale Cutting of Silicon, ibid., 2007, vol. 47, no. 3–4, pp. 562–569.
64. Li, X.P., Cai, M.B., Rahman, M., et al., Study of the Upper Bound of Tool Edge Radius in Nanoscale Ductile Mode
Cutting of Silicon Wafer, Int. J. Advanced Manufacturing Technology, 2010, vol. 48, no. 9–12, pp. 993–999.
65.Yan, J.W., Zhao, H.W., and Kuriyagawa, T, Effects of Tool Edge Radius on Ductile Machining of Silicon: an Inves
tigation by FEM, Semiconductor Science and Technology, 2009, vol. 24, no. 7, art. 075018.
66. Blake, P.N. and Scattergood, R.O., DuctileRegime Machining of Germanium and Silicon, J. Am. Ceramic Soc.,
1990, vol. 73, no. 4, pp. 949–957.
67. Ajjarapu, S.K., Patten, J.A., Cherukuri, H., et al., Numerical Simulations of Ductile Regime Machining of Silicon
Nitride Using the DruckerPrager Material Model, in Proc. of the Institution of Mechanical Engineers, Part C, 2004,
vol. 218, no. 6, pp. 577–582.
68. Patten, J., Gao, W.I., and Yasuto, K., Ductile Regime Nanomachining of SingleCrystal Silicon Carbide, J. Man
ufacturing Science and Engineering, 2005, vol. 127, no. 3, p. 522–532.
69. Bhattacharya, B., Patten, J.A., and Jacob, J., Single Point Diamond Turning of CVD Coated Silicon Carbide, in
Proc. MSEC 2006, ASME Int. Conf. on Manufacturing Science and Engineering, Ypsilanti, MI, USA, October 8–11,
2006.
70. Young, H.T., Huang, H.Y., and Yang, Y.J, A Fundamental Modeling Approach for NanoGrinding of Silicon
Wafers, in Progress on Advanced Manufacture for Micro/Nano Technology 2005, Parts 1 and 2, 2006, vol. 505–507,
pp. 253–258.
71. Young, H.T., Liao, H.T., and Huang, H. Y., Novel Method to Investigate the Critical Depth of Cut of Ground Sili
con Wafer, J. Materials Processing Technology, 2007, vol. 182, no. 1–3, pp. 157–162.
72. Yan, J.W., Asami, T., Harada, H, .et al., Fundamental Investigation of Subsurface Damage in Single Crystalline Sil
icon Caused by Diamond Machining, Precision Engineering, 2009, vol. 33, no. 4, pp. 378–386.
73. Egashira, K. and Mizutani, K., MicroDrilling of Monocrystalline Silicon Using a Cutting Tool, ibid., 2002, vol. 26,
no. 4, pp. 263–268.
74. Yan, J.W., Laser MicroRaman Spectroscopy of SinglePoint Diamond Machined Silicon Substrates, J. Appl. Phys.,
2004, vol. 95, no. 4, pp. 2094–2101.
75. Yan, J.W., Tamaki, J., Syoji, K., et al., SinglePoint Diamond Turning of CaF2 for Nanometric Surface, Int. J.
Advanced Manufacturing Technology, 2004, vol. 24, no. 9–10, pp. 640–646.
76. Yan, J.W., Gai, X.H., and Kuriyagawa, T., Fabricating Nano Ribbons and Nano Fibers of Semiconductor Materials
by Diamond Turning, J. Nanoscience and Nanotechnology, 2009, vol. 9, no. 2, pp. 1423–1427.
77. Yan, J.W., Syoji, K., and Tamaki, J., Crystallographic Effects in Micro/Nanomachining, J. Vacuum Science & Tech
nology B, 2004, vol. 22, no. 1, pp. 46–51.
78. O'Connor, B.P., Marsh, E.R., and Couey, J.A., On the Effect of Crystallographic Orientation on Ductile Material
Removal in Silicon, Precision Engineering, 2005, vol. 29, no. 1, pp. 124–132.
79. Yan, J.W., Maekawa, K., Tamaki, J., et al., Experimental Study on the Ultraprecision Ductile Machinability of Sin
gleCrystal Germanium, JSME Int. J., Series C, 2004, vol. 47, no. 1, pp. 29–36.
80. Yan, J.W., Takahashi, Y., Tamaki, J., et al., Ultraprecision Machining Characteristics of PolyCrystalline Germa
nium, ibid., 2006, vol. 49, no. 1, pp. 63–69.

81. Venkatachalam, S., Predictive Modeling for Ductile Machining of Brittle Materials: PhD Dissertation, Atlanta, GA,
USA: The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 2007.
82. Venkatachalam, S., Li, X.P., and, Liang S.Y., Predictive Modeling of Transition Undeformed Chip Thickness in
DuctileRegime MicroMachining of Single Crystal Brittle Materials, J. Materials Processing Technology, 2009,
vol. 209, no. 7, pp. 3306–3319.
83. Liu, K. and Li, X.P., Modeling of Ductile Cutting of Tungsten Carbide, Trans. NAMRI/SME, 2001, vol. 29,
pp. 251–258.
84. Yan, J.W., Asami, T., Harada, H., .et al., Fundamental Investigation of Subsurface Damage in Single Crystalline Sil
icon Caused By Diamond Machining, Precision Engineering, 2009, vol. 33, no. 4, pp. 378–386.
85. Rusnaldy, T., Ko, J., and Kim, H.S., MicroEndMilling of SingleCrystal Silicon, Int. J. Machine Tools & Manu
facture, 2007, vol. 47, pp. 2111–2119.
86. Jasinevicius, R.G., Duduch, J.G., and, Pizani, P.S., Structure Evaluation of Submicrometer Silicon Chips Removed
by Diamond Turning, Semiconductor Science and Technology, 2007, vol. 22, no. 5, pp. 561–573.
87. Yan, J.W., Maekawa, K., Tamaki, J., et al., Microgrooving on SingleCrystal Germanium for Infrared Fresnel
Lenses, J. Micromechanics and Microengineering, 2005, vol. 15, no. 10, pp. 1925–1931.
88. Jasinevicius, R.G., Duduch, J.G., and Pizani, P.S., Insitu Raman Spectroscopy Analysis of ReCrystallization
Annealing Of Diamond Turned Silicon Crystal, J. Braz. Soc. of Mech. Sci. & Eng., 2007, vol. XXIX, no. 1, pp. 49–54.
89. Jasinevicius, R.G., Duduch, J.G., Montanari, L., et al., Phase Transformation and Residual Stress Probed by
Raman Spectroscopy in DiamondTurned Single Crystal Silicon, in Proc. Institution of Mechanical Engineers, Part
B, 2008, vol. 222, no. 9, pp. 1065–1073.
90. Yan, J.W., Syoji, K., and Tamaki, J., Crystallographic Effects in Micro/Nanomachining, J. Vacuum Science & Tech
nology B, 2004, vol. 22, no. 1, pp. 46–51.
91. Fang, F.Z., Wu, H., Zhou, W., et al., A Study on Mechanism of NanoCutting SingleCrystal Silicon, J. Materials
Processing Technology, 2007, vol. 184, no. 1–3, pp. 407–410.
92. Pizani, P.S., Lanciotti, F., Jasinevicius, R.G., et al., Raman Characterization of Structural Disorder and Residual
Strains in Micromachined GaAs, J. Appl. Phys., 2000, vol. 87, no. 3, pp. 1280–1283.
93. Jasinevicius, R.G. and Pizani, P.S., Annealing Treatment of Amorphous Silicon Generated by Single Point Dia
mond Turning, Int. J. Advanced Manufacturing Technology, 2007, vol. 34, pp. 680–688.
94. Morris, J.C., Callahan, D.L., Kulik, J., et al., Origins of the Ductile Regime in SinglePoint Diamond Turning of
Semiconductors, J. Am. Ceramic Soc., 1995, vol. 78, no. 8, pp. 2015–2020.
95. Puttic, K.E., Whitmore, L.C., Zhdan, P., et al., Energy Scaling Transitions in Machining of Silicon by Diamond,
Tribology Int. , 1995, vol. 28, no. 6, pp. 349–355.
96. Cheung, C.F., To, S., and Lee, W.B.., Anisotropy of Surface Roughness in Diamond Turning of Brittle Single Crys
tals, Materials and Manufacturing Processes, 2002, vol. 17, no 2, pp. 251–267.
97. Young, H.T., Huang, H.Y., and Lee, W.B., A Fundamental Modeling Approach for NanoGrinding of Silicon
Wafers, Progress Advanced Manufacture for Micro/Nano Technology, 2005, Parts 1 and 2, 2006, vol. 505–507,
pp. 253–258.
98. Young H. T., Liao H. T., and, Huang, H.Y., Novel Method to Investigate the Critical Depth of Cut of Ground Sil
icon Wafer, J. Materials Processing Technology, 2007, vol. 182, no. 1–3, pp. 157–162.
99. O’Connor, B.P., The Effect of Crystallographic Orientation on Ductile Material Removal in Silicon, Master of Sci
ence Thesis, University Park, PA, USA: The Graduate School, College of Engineering, The Pennsylvania State Uni
versity, 2002.
100. Leung, T.P., Lee, W.B., and Lu, X.M., Diamond Turning of Silicon Substrates in DuctileRegime, J. Materials Pro
cessing Technology, 1998, vol. 73, no. 1–3, pp. 42–48.
101. Yan, J.W., Syoji, K., Kuriyagawa, T., et al., Ductile, Regime Turning at Large Tool Feed, ibid., 2002, vol. 121, no. 2–
3, pp. 363–372.
102. Komanduri, R., Chandrasekaran, N., and Raff, L.M., Molecular Dynamics Simulation of the Nanometric Cutting
of Silicon, Phil. Mag. B, 2001, vol. 81, no. 12, pp. 1989–2019.
103. Rusnaldy, T., Ko, J., and Kim, H.S., An Experimental Study on Microcutting of Silicon Using a Micromilling
Machine, Int. J. Advanced Manufacturing Technology, 2008, vol. 39, no. 1–2, pp. 85–91.
104. Yan, J., Asami, T., and Kuriyagawa, T., Response of MachiningDamaged SingleCrystalline Silicon Wafers to
Nanosecond Pulsed Laser Irradiation, Semiconductor Science and Technology, 2007, vol. 22, no. 4, pp. 392–395.
105. Dong, L. Insitu Detection and Heating of High Pressure Metallic Phase of Silicon During Scratching, PhD Dis
sertation, Charlotte, NC, USA: University of North Carolina, 2006.
106. Dong, L. and Patten, J.A., Real Time Infrared (IR) Thermal Imaging of Laser–Heated High Pressure Phase of Sili
con in Proc. of Advanced Laser Applications Conf. & Expo (ALAC 2007), Boston, Sept. 24–25, 2007.
107. Amer, M.S., Dosser, L., LeClair, S.,.et al., Induced Stresses and Structural Changes in Silicon Wafers as a result of
Laser MicroMachining, Appl. Surface Science, 2002, vol. 187, no. 3–4, pp. 291–296.
108. Amer, M.S., ElAshry, M.A., Dosser, L.R., et al., Femtosecond versus Nanosecond Laser Machining: Comparison
of Induced Stresses and Structural Changes in Silicon Wafers, ibid., 2005, vol. 242, pp. 162–167.
109. Shayan, A.R., Poyraz, H.B., Ravindra, D., and Patten, J.A., Pressure and Temperature Effects in MicroLaser
Assisted Machining (μlam) of Silicon Carbide, Transactions of NAMRI/SME, 2009, vol. 37, pp. 75–80.
110. Yan, J.W., Syoji, K., and Tamaki, J.., Some Observations on the Wear of Diamond Tools in UltraPrecision Cutting
of SingleCrystal Silicon, Wear, 2003, vol. 255, no. 7–12, pp. 1380–1387.
111. Uddin, M.S., Seah, K.H.W., Li, X.P., et al., Effect of Crystallographic Orientation on Wear of Diamond Tools for
NanoScale Ductile Cutting of Silicon, ibid., 2004, vol. 257, no. 7–8, pp. 751–759.
112. Uddin, M.S., Seah, K.H.W., Rahman, M., et al., Performance of Single Crystal Diamond Tools in Ductile Mode
Cutting of Silicon, J. Materials Processing Technology, 2007, vol. 185, no. 1–3, pp. 24–30.
113. Li, X.P., He, T., and Rahman, M., Tool Wear Characteristics and their Effects on Nanoscale Ductile Mode Cutting
of Silicon Wafer, Wear, 2005, vol. 259, no. 7–12, pp. 1207–1214.
114. Born, D.K. and Goodman, W.A., An Empirical Survey on the Influence of Machining Parameters on Tool Wear in
Diamond Turning of Large SingleCrystal Silicon Optics, Precision Engineering, 2001, vol. 25, no. 4, pp. 247–257.
115. DurazoCardenas, I., Shore, P., Luo, X., et al., 3D Characterization of Tool Wear Whilst Diamond Turning Silicon,
Wear, 2007, vol. 262, no. 3–4, pp. 340–349.
116. Li, X.P., Cai M.B., Neo, W.C.L., et al., Effect of Crystalline Orientation of a Diamond Tool on the Machined Sur
face in Ductile Mode Cutting of Silicon, in Proc. Institution of Mechanical Eng. B, 2008, vol. 222, no. 12, pp. 1597–
1603.
117. Cai, M.B., Li, X.P., and Rahman, M., Characteristics of “Dynamic Hard Particles” in Nanoscale Ductile Mode
Cutting of Monocrystalline Silicon with Diamond Tools in Relation to Tool Groove Wear, Wear, 2007, vol. 263,
no. 7–12, pp. 1459–1466.
118. Cai, M.B., Li, X.P., and Rahman, M., Study of the Mechanism of Groove Wear of the Diamond Tool in Nanoscale
Ductile Mode Cutting of Monocrystalline Silicon, J. Manufacturing Science and Engineering, 2007, vol. 129, no. 2,
pp. 281–286.
119. Yan, J., Tamaki, J., Syoji, K., et al., Development of a Novel DuctileMachining System for Fabricating Axisym
metric Aspheric Surfaces on Brittle Materials, Advances in Abrasive Technology, 2003, vol. 238, no. 2, pp. 43–48.
120. Yin, L., Vancoille, E.Y.J., Lee, L.C., et al., HighPrecision LowDamage Grinding of Polycrystalline SiC, ibid.,
2003, vol. 238, no. 2, pp. 59–64.
121. Bifano, T., Yi, Y., and Kahl, K., Fixed Abrasive Grinding of CVD SiC Mirrors, Precision Engineering, 1994, vol. 16,
no. 2, pp. 109–116.
122. Yoshino, M., Ogawa, Y., and Aravindan, S., Machining of HardBrittle Materials by a Single Point Tool under
External Hydrostatic Pressure, J. Manufacturing Science and Engineering–Transactions of the ASME, 2005, vol. 127,
no. 4, pp. 837–845.
123. Venkatesh, V.C., Precision Manufacture of Spherical and Aspheric Surfaces on Plastics, Glass, Silicon and Germa
nium, Current Science, 2003, vol. 84, no. 9, pp. 1211–1219.
124. Demirci, I., Mezghani, S., Mkaddem, A., et al., Effects of Abrasive Tools on Surface Finishing under Brittle–Duc
tile Grinding Regimes when Manufacturing Glass, J. Materials Processing Technology, 2010, vol. 210, no. 3, pp. 466–
473.
125. Bandyopadhyay, B.P., Ohmori, H., and Takahashi, I., Ductile Regime Mirror Finish Grinding of Ceramics with
Electrolytic InProcess Dressing (ELID) Grinding, Materials and Manufacturing Processes, 1996, vol. 11, no. 5,
pp. 789–801.
126. Bandyopadhyay, B.P. and Ohmori, H., The Effect of ELID Grinding on the Flexural Strength of Silicon Nitride,
Int. J. Machine Tools & Manufacture, 1999, vol. 39, no. 5, pp. 839–853.
127. Sun, Y.L., Zuo, D.W., Zhu, Y.,W., et al., Surface Formation of Single Silicon Wafer Polished with NanoSized
Al2O3 Powders, Chinese J. Chem. Phys., 2007, vol. 20, no. 6, pp. 643–648.
128. Zuo, D.W., Sun, Y.L., Zhao, Y., et al., Basic Research on Polishing with Ice Bonded Nanoabrasive Pad, J. Vacuum
Science & Technology B, 2009, vol. 27, no. 3, pp. 1514–1519.
129. Hou, Z., Ge, P., Zhang, J., Li, S., and Gao, Y., Experimental Research to Cut Crystal Silicon Using Diamond Wire
Saw, Diamond and Abrasive Engineering, 2007, vol. 5, pp. 14–16.
130. Gao, Y., Ge, P., and Hou, Z., Study on Removal Mechanism of FixedAbrasive Diamond Wire Saw Slicing Monoc
rystalline Silicon, Key Engineering Materials, 2008, vol. 359–360, pp. 450–454.
131. Gao, Y. and Ge, P., Experimental Investigation on BrittleDuctile Transition in Electroplated Diamond Wire Saw
Machining Single Crystal Silicon, ibid., 2010, vol. 431–432, pp. 265–268.
132. Teomete, E., Roughness Damage Evolution due to Wire Saw Process, Int. J. Precision Engineering and Manufactur
ing, 2011, vol. 12, no. 6, pp. 941–947.
133. Teomete, E., Effect of Process Parameters on Surface Quality for Wire Saw Cutting of Alumina Ceramic, Gazi Uni
versity J. Science, 2011, vol. 24, no. 2, pp. 291–297.
134. Huang, B., Gao, Y., and Ge, P., Study on Surface Defect and Wire Wear Mechanism during Single Crystal Silicon
Slicing with Electroplated Diamond Wire Saw, Diamond and Abras. Eng., 2011, vol. 30, no. 1, pp. 53–57.
135. Wu, H., Melkote, S.N., and Danyluk, S., Mechanical Strength of Silicon Wafers Cut By Loose Abrasive Slurry and
Fixed Abrasive Diamond Wire Sawing, Advanced Engineering Materials, 2012, vol. 14, no. 5, pp. 342–348.