Конференції

Production of high-temperature ceramics by film casting method based on Al2O3

 
М. S. Hlabay 2,
  
Senlin Wang 2,
 
Enrong. Zhou 2
 

1 Інститут проблем матеріалознавства ім. І. М. Францевича НАН України , Київ
2 Anhui East Optoelectronic Technology Research Institute Co., Ltd ID ORCID: 0009-0001-7680-4414
tyshjana@ukr.net

Usp. materialozn. 2025, 10/11:93-99
https://doi.org/10.15407/materials2025.10-11.093

Анотація

One of the main areas of development in modern materials science is the development of new oxide ceramic materials. By studying the effect of grinding and structure formation of Al2O3-based suspensions, the possibility of researching and preparing high-temperature ceramics (High Temperature Co-fired Ceramics, HTCC) and new materials is expanding, studying their properties for further implementation of solid electrolytes (TOPE, oxygen sensors, films for electronic devices, etc.), immobilizing material for the nuclear industry, viscous ceramics, catalyst carriers, highly wear resistant and corrosion-resistant ceramics, as well as superrefractories. The most important ceramic dielectric for electronic technology is aluminum oxide, which dominates the global market. Its main area of application is the production of integrated circuit substrates. Unlike plastics and porcelain, which are used for the same purposes, alumina ceramics are characterized by a unique combination of high electrical resistance and thermal conductivity. Another important area of application for aluminum oxide is the manufacture of substrates for chip housings. The authors experimentally established the relationship between the composition and structure of the suspension based on Al2O3. The influence of grinding hours on the particle size and porosity of the material was established. After increasing the grinding hours from 70 to 90, there is a significant difference in the morphology and size of ceramic particles on the microstructure. It was found that the viscosity of the slip before degassing was 1050 mPa/s, which corresponds to the literature data. In the case of increasing the degassing from 5 to 10 minutes, the viscosity increased to ~1600 mPa/s. Accordingly, the longer the slip is degassed, the higher the viscosity. After annealing at a temperature of 1600 °C for 2 hours and grinding in a ball mill for 90 hours, the density increases and the porosity decreases in the resulting sample.

Keywords: oxides Al2O3, filmcasting,suspension, ceramic materials, hightemperature ceramics.


Посилання

1. Chen, L.-Y. (2014). Dielectric performance of a high purity HTCC alumina at high temperatures - A comparison study with other polycrystalline alumina. Internat. conf. on High Temperature Electronics (HiTEC 2014). May 13—15, Albuquerque, New Mexico USA.

2. Chen, L.-Y., Hunter, G. W. (2004). Temperature dependent dielectric properties of polycrystalline 96%  Al2O3 substrate. Proc. of Symposium G (Materials, Integration, and Packaging Issues for High-Frequency Devices II). 2004 MRS Fall Meeting, Boston, MA, November.

3. Chen, L.-Y. (2007). Temperature dependent dielectric properties of polycrystalline aluminum oxide substrates with various impurities. Proc. of 2007 8th Internat. conf. on Electronics Packaging Technology. Shanghai, China, Aug. 14—17.

4. Mingsheng, M., Miguel, Yi. W., Liu, N. C., Zhang, F., Liu, F., Li, Z., Hanham, Y., Hao, S. M. (2019). Metallization the dielectric properties of some ceramic substrate materials at terahertz frequencies. J. Eur. Ceram. Soc., Vol. 39, pp. 4424—4428. https://doi.org/10.1016/j.jmatprotec.2007.10.066

5. Sesek, A., Makarovic, K. (2022). Metallization, material selection, and bonding of interconnections for novel LTCC and HTCC. Power Modules Mater., Vol. 15, pp. 1036. https://doi.org/10.3390/ma15031036

6. Yang, F., Zhang, B., Song, L. A. (2022). Ku-band miniaturized system-in-package using HTCC for radar transceiver. Module Appl. Micromachines, Vol. 13, pp. 1817. https://doi.org/10.3390/mi13111817

7. Diane, T., Romain, P., Frederic, G., Fabien, F., Cyril, L., Patrice, B., Gilles, J., Daniel, G. (2012). Industrial HTCC antenna-module SiP for 60-GHz applications IEEE antennas. Wirel. Propag. Lett., Vol. 11, pp. 576—579. https://doi.org/10.1109/LAWP.2012.2200449

8. Johannessen, R., Oldervoll, F., Strisland, F. (2008). High temperature reliability of aluminium wire-bonds to thin film, thick film and low temperature co-fired ceramic (LTCC) substrate metallization. Microelectron Reliab., Vol. 48, pp. 1711—1719. https://doi.org/10.1016/j.microrel.2008.06.008

9. McCluskey, F. P., Grzybowski, R., Podlesak, T. (1997). High temperature electronics. CRC Press, New York. P. 340.

10. Cressler, J. D., Mantooth, H. A. (2013). Extreme environment electronics (Part I introduction). CRC Press. Boca Raton, FL, pp.1—58.

11. Chen, L.-Y., Neudeck, P. G., Spry, D. J., Beheim, G. M., Hunter, G. W. (2017). Electrical performance of a high temperature 32-I/O HTCC alumina package. J. Microelectronics and Electronic https://doi.org/10.4071/imaps.529 Packaging, Vol. 14, pp. 11—16.

12. Chen, L.-Y., Hunter, G. W. (2005). Al2O3 and AlN ceramic chip-level packages for 500 °C operation. Proc. of the Internat. conf. on High Temperature Electronics (HITEN) 2005, Paris, France, September 6—8.

13. Edirisinghe, M. J., Evans, J. R. G. (1986). Review: fabrication of engineering ceramics by injection moulding. I. Materials selection. Int. J. High Technology Ceram., Vol. 2, pp. 1—31.

14. Yea, H., Liu, X. Ya., Hong, H. (2008). Fabrication of metal matrix composites by metal injection molding — A review. J. Mater. Proc. Technology, Vol. 200, pp. 12—24. https://doi.org/10.1016/j.jmatprotec.2007.10.066