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Optoelectronic properties of plasma-chemical SiCN films

A.Kozak,
 
O.Porada,
 
L.Ivashchenko,
 
V.Ivaschenko,
 
T.Tomyla,
 
† V.Malakhov
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
Materials II International Scientific Conference «Semiconductor materials, information technology and Photovoltaics», Kremenchuk, Ukraine, 22-24 May, 2013, 2013
http://www.materials.kiev.ua/article/1639

Abstract

Researched SiCN films obtained by PECVD (plasma enhanced chemical vapor deposition) with heksametyldisylazanu (HMDSN) as prekur-Sora [1,2]. The effect of additional nitrogen in the reaction chamber at optoelektronni properties of the films. Film characterized by using infrared spectroscopy and photoluminescence spectra. Also studied the mechanical properties of the films, and Sami, NANOHARDNESS and modulus of elasticity depending on the flow of nitrogen. Key parameters such film deposition. Substrate temperature no higher than 450 ° C. The power level (PW) HF (40.68 MHz) plasma - 20W. The negative bias on the substrate - 200 V. Thickness obtained films were 0.5-0.6 microns.


FTIR, HEXAMETHYLDISILAZANE, OPTICAL SPECTRA, PECVD, SICN FILMS

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