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Effect of Substrate temperature on the Properties of PECVD SiCN Films

O.Porada,
 
A.Kozak,
 
V.Ivaschenko,
 
L.Ivashchenko,
 
T.Tomyla
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
Proceedings of the International Conference “Nanomaterials: Applications and Properties”, Lviv, Ukraine, September 21-23, 2014, 2014, Т.3, #1
http://www.materials.kiev.ua/article/1645

Abstract

An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films.


FTIR, HEXAMETHYLDISILAZANE, NANOINDENTATION, PECVD, SICN FILMS

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