Effect of Substrate temperature on the Properties of PECVD SiCN Films

     

Інститут проблем матеріалознавства ім. І. М. Францевича НАН України , вул. Омеляна Пріцака, 3, Київ, 03142, Україна
Proceedings of the International Conference “Nanomaterials: Applications and Properties”, Lviv, Ukraine, September 21-23, 2014, 2014, Т.3, #1
http://www.materials.kiev.ua/article/1645

Анотація

An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films.


FTIR, PECVD, SI-C-N ПЛІВКИ, ГЕКСАМЕТИЛДІСИЛАЗАН, НАНОІНДЕНТУВАННЯ