Effect of the nitrogen flow on the properties of Si-C-N amorphous thin films produced by magnetron sputtering

     
С.Н.Дуб,
 
О.Литвин,
 
І.І.Тимофєєва,
 
Г.Н.Толмачева
 

Інститут проблем матеріалознавства ім. І. М. Францевича НАН України , вул. Омеляна Пріцака, 3, Київ, 03142, Україна
Journal of Superhard Materials, 2015, Т.37, #5
http://www.materials.kiev.ua/article/1649

Анотація

The Si-C-N thin films have been deposited onto silicon substrates by reactive direct current magnetron sputtering of a silicon–carbon target at different ratios of nitrogen, FN2, and argon, FAr, flows rates. The X-ray diffraction, IR spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and nanoindentation have been used to study the structure, picture of chemical bonds, surface morphology, and mechanical properties of the produced Si-C-N films. It has been found that all Si-C-N films produced are X-ray amorphous, their surface roughness slightly depends on FN2 and is 0.23–0.28 nm; an increase of the FN2 brings about the appearance and intensification of the Si-N and C-N bonds as well as weakening of Si-C bonds; thin films contain a small amount of oxygen, which makes Si-O and C-O bonds and the latter weaken with increasing FN2. The nanohardness and elastic modulus of the SiC amorphous thin films have been defined to be 23 and 207 GPa, respectively. The nanohardness and elastic modulus of Si-C-N thin films decrease with increasing nitrogen flow, which is caused by the weakening of Si-C bonds.


SI-C-N ПЛІВКИ, МАГНЕТРОННЕ РОЗПИЛЕННЯ, НАНОІНДЕНТУВАННЯ, РЕНТГЕНОФЛУОРЕСЦЕНТНА СПЕКТРОМЕТРІЯ, ХІМІЧНІ ЗВ'ЯЗКИ