Research on suppressing brittle fracture and implementing ductile mode cutting for improving surface quality at silicon wafers manufacturing

E.O.Pashchenko 2,
D.O.Savchenko 2

1 I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
2 V. Bakul Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Kyiv, Ukraine

Journal of Physics: Conference Series, 2021, Т.2045, #1, 012005


. Single crystal silicon is an important basic material used to manufacture electronic and photovoltaic devices. Ductile mode of diamond wire sawing is a promising method for silicon wafering in order to produce wafers with minimal surface damage. To achieve ductile mode, the correct applying of cutting parameters and careful wire design is necessary. This study investigates the scratching of monocrystalline silicon by the abrasive particles of different geometry, which simulates the material removal process in diamond wire sawing. Diamonds, crushed and spherical tungsten carbide (WC) particles served as abrasives. Experiments show that spherical abrasives enhance ductile mode cutting significantly decreasing brittle damage when compared to irregular shape particles. Spherical WC particles permit to increase the critical load and critical cut depth of ductile-to-brittle transition from 5 to 10 times. The depth of the damaged subsurface layer decreased from 5 µm to 0.2 µm due to the absence of brittle cracks. A uniform regular distribution and appropriate suitable density of abrasive particles is obligatory for cracking reduction. For that, the method of diamond particles uniform deposition with the controlled density by a polymer binder combining high modulus and adhesive capacity with good flexibility was elaborated. The method includes preliminary diamond particles fixation on a thin resin layer providing high uniformity and subsequent strong fixation by a thicker resin layer. The research on ovalization of diamond particles was performed for smoothening cutting edges. The method is based on the activation of the graphitization process at sharp edges of particles under the action of metal salts at increased temperatures.


1. Wu H 2016 Wire sawing technology: a state-of-the-art review Precis. Eng.43 1-9

2. Kumar A and Melkote S N 2018 Diamond wire sawing of solar silicon wafers: a sustainable manufacturing alternative to loose abrasive slurry sawing Procedia Manuf. 21 549-66

3. Carton L, Riva R, Nelias D, Fourmeau M, Coustier F and Chabli A 2019 Comparative analysis of mechanical strength of diamond-sawn silicon wafers depending on saw mark orientation, crystalline nature and thickness Sol. Energy Mater. Sol. Cells 201 110068

4. Sekhar H, Fukuda T, Tanahashi K, Takato H, Ono H, Sampei Y and Kobayashi T 2020 Mechanical strength problem of thin silicon wafers (120 and 140 μm) cut with thinner diamond wires (Si kerf 120→ 100 μm) for photovoltaic use Mater. Sci. Semicond. Process. 119 105209

5. Suzuki T, Nishino Y and Yan J 2017 Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon Precis. Eng. 50 32-43

6. Ozturk S, Aydin L and Celik E 2018 A comprehensive study on slicing processes optimization of silicon ingot for photovoltaic applications Sol. Energy 161 109-24

7. Pala U, Kuster F and Wegener K 2020 Characterization of electroplated diamond wires and the resulting workpiece quality in silicon sawing J. Mater. Process. Technol. 276 116390

8. Xiao H, Wang H, Yu N, Liang R, Tong Z, Chen Z and Wang J 2019 Evaluation of fixed abrasive diamond wire sawing induced subsurface damage of solar silicon wafers J. Mater. Process. Technol. 273 116267

9. Li X, Gao Y, Ge P, Zhang L and Bi W 2019 The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon Mater. Sci. Semicond. Process. 91 316-26

10. Costa E C, Xavier F A, Knoblauch R, Binder C and Weingaertner W L 2020 Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw Sol. Energy 207 640-50

11. Wang B, Melkote S N, Saraogi S and Wang P 2020 Effect of scratching speed on phase transformations in high-speed scratching of monocrystalline silicon Mater. Sci. Eng. A. 772 138836

12. Wang B, Melkote S N, Wang P and Saraogi S 2020 Effect of speed on material removal behavior in scribing of monocrystalline silicon Precis. Eng. 66 315-323

13. Huang W and Yan J 2021 Fundamental investigation of diamond cutting of micro V-shaped grooves on a polycrystalline soft-brittle material J. Manuf. Mater. Process. 5(1) 17 14. Yin Y, Gao Y, Wang L, Zhang L and Pu T 2021 Analysis of crack-free surface generation of photovoltaic polysilicon wafer cut by diamond wire saw Sol. Energy 216 245-58 15. Wu H and Melkote S N 2012 Study of ductile-to-brittle transition in single grit diamond scribing of silicon: application to wire sawing of silicon wafers J. Eng. Mater. Technol. 134(4) 041011

16. Kumar A, Melkote S N, Kaminski S and Arcona C 2017 Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon J. Am. Ceram. Soc. 100(4) 1350-9

17. Wallburg F, Kuna M, Budnitzki M and Schoenfelder S 2020 Experimental and numerical analysis of scratching induced damage during diamond wire sawing of silicon Wear 454 203328

18. Wang Y, Li D L, Ding Z J, Liu J G and Wang R 2019 Modeling and verifying of sawing force in ultrasonic vibration assisted diamond wire sawing (UAWS) based on impact load Int. J. Mech. Sci. 164 105161

19. Wu H and Melkote S 2012 Effect of crystallographic orientation on ductile scribing of crystalline silicon: role of phase transformation and slip Mater. Sci. Eng. A. 549 200-5

20. Wu H and Melkote S N 2013 Effect of crystal defects on mechanical properties relevant to cutting of multicrystalline solar silicon Mater. Sci. Semicond. Process. 16(6) 1416-21

21. Kumar A and Melkote S N 2018 Wear of diamond in scribing of multi-crystalline silicon J. Appl. Phys. 124(6) 065101

22. Knoblauch R, Boing D, Weingaertner W L, Wegener K, Kuster F and Xavier F A 2018 Investigation of the progressive wear of individual diamond grains in wire used to cut monocrystalline silicon Wear 414 50-8

23. Kumar A and Melkote S N 2017 The chemo-mechanical effect of cutting fluid on material removal in diamond scribing of silicon Appl. Phys. Lett. 111(1) 011901

24. Yao C, Chen D, Xu K, Zheng Z, Wang Q and Liu Y 2021 Study on nano silicon carbide waterbased cutting fluid in polysilicon cutting Mater. Sci. Semicond. Process. 123 105512

25. Yan L, Wang Q, Li H and Zhan Q 2021 Surface generation mechanism of ceramic matrix composite in ultrasonic assisted wire sawing Ceram. Int. 47(2) 1740-9

26. Ge M, Wang P, Bi W and Ge P 2021 Fabrication of thin resin-bonded diamond wire and its application to ductile-mode wire sawing of mono-crystalline silicon Mater. Sci. Semicond. Process. 126 105665

27. Liu T, Ge Pand Bi W 2021 The influence of wire speed on phase transitions and residual stress in single crystal silicon wafers sawn by resin bonded diamond wire saw Micromach. 12(4) 429

28. Li H, Yu X, Zhu X, Jin C, Zhou S and Yang D 2021 A microscopic TEM study of the defect layers in cast-mono crystalline silicon wafers induced by diamond-wire sawing AIP Adv. 11(4) 045103

29. Kovalchenko A 2013 Studies of the ductile mode of cutting brittle materials (A review) J. Superhard Mater. 35(5) 259-76

30. Kumar A, Kaminski S, Melkote S and Arcona C 2016 Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers Wear 364 163–8

31. Kumar A, Kovalchenko A, Pogue V, Pashchenko E and Melkote S N 2016 Ductile mode behavior of silicon during scribing by spherical abrasive particles Procedia CIRP 45 147-50

32. Kovalchenko A M, Goel S, Zakiev I M, Pashchenko E A andAl-Sayegh R 2019 Suppressing scratch-induced brittle fracture in silicon by geometric design modification of the abrasive grits J. Mater. Res. Technol. 8(1) 703-12

33. Veerabagu A, Alreja C and Subbiah S 2020 Ductile-brittle transition detection in scratching of single crystal silicon using charged particle emissions Procedia CIRP 87 378-84

34. Budnitzki M and Kuna M 2019 Scratching of silicon surfaces Int. J. Solids Struct. 162 211-6