Temperature dependence of the electronic structure of the surface of (111) Si.

S.Zubkova,
 
T.V.Gorkavenko,
 
V.A.Makara,
 
L.Rusina,
 
O.V.Smelyanskiy
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Krzhizhanovsky str., 3, Kyiv, 03142, Ukraine
- Kyiv, Ukraine: Taras Shevchenko National University of Kyiv, 2011, #4
http://www.materials.kiev.ua/article/675

Abstract

The temperature dependence of the electronic band structure of the (111) surface Si has been investigated. The self-consistent pseudopotential method within bounds of the layered superlattice model was used. Electron-phonon interaction temperature dependence effect on the band structure has been taken into account using the Debye-Waller factor as well as a lattice expansion effect has been taken into consideration using the temperature dependence of the linear expansion coefficient. The peculiarities of the temperature dependence of direct and indirect band gaps and electronic densities of states of the (111) surface Si are discussed in detals.