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  4. № 12 2014
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Formation of nickel-platinum silicide layer as a barrier Schottky diodes

P.Kuchynski,
 
F.Komarov,
 
O.Milchanin,
 
T.Kovaleva,
 
V.Saladukha,
 
A.Turtsevich,
 
J.Solovjov,
 
S.Gaponenko
 

Electrical Contacts and Electrodes - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2014, #12
http://www.materials.kiev.ua/article/1154

Abstract

A new method of forming a Schottky barrier, including a magnetron deposition of thin compound metal films (Pt, Ni and V) on silicon and a subsequent heat treatment step, was proposed. Using this method Schottky diodes were fabricated with a barrier height from 0,69 to 0,71 V. It was found that the barrier layer consists of Ni1-xPtxSi silicide phase. Full text download


MAGNETRON DEPOSITION, SCHOTTKY BARRIER HEIGHT, SILICIDE OF NICKEL, SILICIDY OF PLATINUM, THIN FILMS

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