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Electric and photoelectric properties of heterojunctions α-SiCN/c-SiA

V.Sukach,
 
V.V.Tetorkin,
 
V.Ivaschenko,
 
O.Porada,
 
A.Kozak,
 
A.I.Tkachuk,
 
S.A.Voroschenko
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
Optoelectronics and semiconductor technique.., 2013, #48
http://www.materials.kiev.ua/article/1640

Abstract

It was established the dominant mechanisms of charge transfer in heterojunctions a-SiCN / c-Si in the temperature range 196 - 353 0K of produced by plasma chemical method at low (T <300 ° C) deposition temperature the a-SiCN amorphous layers on the crystalline p-Si substrate with hole type conductivity. It was established the role of hetero networks in the mechanisms of transfer charges and photosensitivity of heterojunctions. The estimation of the main electrical parameters of the layers a-SiCN. shows that direct CVC explained within the theory of the monopolar injection with a uniform distribution of traps for energy. Return CVC caused by the contribution of the generation-recombination and tunelno- recombination component. Photosensitivity of the heterojunctions was explained by the localization only in the active region p-Si.


AMORPHOUS LAYERS SICN, HETEROJUNCTION, MECHANISMS OFCHARGE TRANSFER, PHOTOSENSITIVITY

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