EFFECT OF THE f–d EXCHANGE INTERACTION ON THE PROPERTIES OF THIN-FILM MDM STRUCTURES (M—Fe, Co, Ni; D—Tb₂O₃)

Abstract

The effect of f–d interaction on the current voltage characteristics of metal–dielectric–metal (MDM) structures containing contacts of d-metals (Fe, Co, Ni) with rare-earth metal (REM) oxides. The f–d exchange interaction between atoms with unfilled f and d electron shells in the thin-film MDM structure of (Fe, Co, Ni)/Tb₂O₃/(Fe, Co, Ni) type significantly decreases the height of the potential barrier to transfer of charges between the electrodes. For conditions of the over-barrier charge transfer mechanism, the force and energy of the f–d interaction that influence the movement of an electron in the MDM structure have been determined. The effect of f–d interaction on the current voltage characteristics of MDM structures decreases with higher temperature and increases with the stronger magnetic field. This may be due to the influence of these factors on the ordering of magnetic moments of f- and d-atoms in the f–d interaction region.