Double-wall silicon carbide nanotubes with covalent bond between walls

  

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
Mathematical Models and Computing Experiment in Material Science - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2010, #12
http://www.materials.kiev.ua/article/453

Abstract

Computer design of new type of double-wall silicon carbide nanotubes with covalent bond between walsl is suggested. Structure and temperature stability of these objects are investigated with molecular dynamic simulations. Nanotubes with small diameters spontaneously are destroyed. Nanotubes with large diameters are stable up to 1000-1400 K. Found out the phenomenon of negative heat capacity of the considered nanotubes related with structural reconstruction which takes place at the temperature increasing.


DOUBLE-WALL SILICON NANOTUBES, MOLECULAR DYNAMICS, NEGATIVE HEAT CAPACITY, SILICON CARBIDE