Conferences

Galvanic molybdenum carbide coatings onto semiconductor and dielectric materials from ionic melts

 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Krzhizhanovsky str., 3, Kyiv, 03142, Ukraine
Adhesion of Melts and Brazing of Materials - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2009, #42
http://www.materials.kiev.ua/article/498

Abstract

For obtaining of galvanic molybdenum carbide coatings at surface of semiconductor and dielectric materials (diamond, cubic boron nitride, silicon and boron carbides) from molten salt by high temperature electrochemical synthesis, two compositions of electrolytes were chosen: Na2WO4-MoO3-Li2СО3 and KCl-NaCl-Na2MoO4-Na2CO3. Optimal electrolysis conditions (temperature, cathode current density, duration of process) were determined for continuous high-quality coatings deposition. Operation characteristics of powders with carbide coatings were estimated.


BORON NITRIDE, DIAMOND, DIELECTRIC, GALVANIC COATING, IONIC MELT, MOLYBDENUM CARBIDE, SEMICONDUCTOR