LASER TREATMENT OF CAPACITANCE-RESISTANCE THICK-FILMS ON BASIS LaB6

A.Paustovskiy,
 
B.Rud,
  
E.Telnikov,
 
V.V.Kremeneckiy,
 
P.S.Smertenko,
 
I.V.ZakharchenkO,
 
A.Rogozinskaya
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
Powder Metallurgy - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2008, #05/06
http://www.materials.kiev.ua/article/748

Abstract

The paper studies the effect of laser processing on the structure and electrophysical properties of LaB6-based thick film resistors (TFR). The phases and structure of the composi¬tion are investigated. The exposure to micro- and nanosecond pulses, unlike millisecond ones, is shown to insignificantly increase the electrical resistance of the film and to aid in forming more uniform and fine TFR structure. LaB6-based TFRs are more resistant to long-term exposure to nanosecond laser radiation than ВаВ6- and (ВаВ6-LaB6)-based ones.


ELECTROPHYSICAL PROPERTIES, LASER TREATMENT, STRUCTURE, THICK FILM RESISTOR (TFR)