Conferences

Surface Morphology and Electrophysical Properties of Thick SnO2-Sb Films after Laser Processing

 
A.Paustovskiy,
 
B.Rud,
 
A.Gonchar,
 
I.Timofeeva,
 
A.Rogozinskaya,
 
E.Telnikov,
 
P.S.Smertenko,
 
N.I.Anyakin,
 
V.V.Kremenitskii,
 
I.V.Zakharchenko
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Krzhizhanovsky str., 3, Kyiv, 03142, Ukraine
Powder Metallurgy - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2014, #09/10
http://www.materials.kiev.ua/article/1304

Abstract

The influence of pulsed laser irradiation on the structure and electrophysical properties of thick resistive films based on the Sn0,9Sb0,1O2 solid solution is studied. Scanning electron microscopy, atomic force microscopy, and X-ray diffraction are used to examine the structure of thick resistive films and determine the distribution of Sn0,9Sb0,1O2 solid solution in surface layers and across the film. Exposure of thick resistive films to nano- and microsecond laser pulses changes their current-voltage characteristics compared to samples subjected to millisecond pulses. The current-voltage characteristics become practically linear in the range from 1 to 10–11 V, thus allowing one to determine the optimum (α = 1) operating voltage range for resistors. The temperature coefficient of resistance depends on the length and energy of pulses.


ATOMIC FORCE MICROSCOPY, BACKSCATTERED ELECTRONS, CURRENT-VOLTAGE CHARACTERISTIC, LASER, RESISTOR, SOLID SOLUTION, TEMPERATURE COEFFICIENT OF RESISTANCE, THERMAL FIELDS