INTERFACIAL REACTION IN Cu–Se DIFFUSION COUPLES AT LOW TEMPERATURES

Bin Yang,
 
Hongqing Jiang,
 
Jingen Zhang,
 
Bai Xiong Liu,
 
Hang Wang
 

Powder Metallurgy - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2015, #01/02
http://www.materials.kiev.ua/article/1900

Abstract

Interfacial reactions between Cu and Se using Cu–Se diffusion couples are studied. The investigation is carried out at temperatures of 150 °C and 200 °C. Heat treated diffusion couples are examined by energy dispersive spectroscopy coupled with scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Different intermetallic compounds are found to form at the interface: CuSe2 at 150 °C, Cu2Se and CuSe2 at 200 °C. The growth kinetics of the intermetallic compounds is followed the parabolic law. The incubation time for the intermetallic compounds is calculated. The formation of intermetallic compounds and its implication for designing novel layered composite brass materials are briefly discussed.


COMPOUND LAYERS, COPPER, DIFFUSION COUPLE, INTERFACIAL REACTIONS, SELENIUM