The structural-phase composition in CoSb_1,2-5,45 (30 nm)—SiO₂ (100 nm)—Si (001) nanoscaled film compositions after deposition and annealings 

Abstract

By methods of physical material science it is established that the formation of crystalline skutterud'tte CoSb₃ phase in the nanoscaled film compositions (NFC's) of CoSb_1,82-5,45 (ЗО nm)—SiO₂ (100 nm)—Si (001) occurs at deposition of ones on a substrate heated above 200 °С and Sb content above 72% (at), which is less than that from phase equilibrium diagram for the bulk Co—Sb system. Formation of CoSb₃ antimonide in NFC's which were deposited on substrate at room temperature occurs in concentration range of Sb from 73,9 to 82,7% (at.) and at annealings in temperature range of 200—500 °С.