SINTERING AND ELECTRICITY PROPERTIES OF ITO TARGETS WITH Bi2O3–ZnO ADDITION

Yu-Jie Chen,
 
Fei Liang,
 
Jia-xiang Liu
 

Powder Metallurgy - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2019, #01/02
http://www.materials.kiev.ua/article/2792

Abstract

High density and low electrical resistivity ITO targets were prepared by normal pressure sintering in oxygen with Bi2O3–ZnO addition. The relative density, microstructure and electrical properties of ITO targets can be adjusted by changing the sintering temperature (1350 °C~1550 °C) and the content of Bi2O3–ZnO. The results showed that the sintering temperature of ITO targets with Bi2O3–ZnO decreased from 1550 to 1400 °C, and the maximum relative density (99.3%) and the lowest electrical resistivity (7.32 • 10–4 Ω • cm) were reached when the sintering temperature was 1400 °C with 8 wt.% Bi2O3–ZnO. The carrier concentration decreased with increasing the contents of Bi2O3–ZnO and sintering temperature. The mobility first increased, and then decreased above 1400 °C as the sintering temperature increased


BI2O3, ITO TARGETS, RESISTIVITY, SINTERING, ZNO