ЕЛЕКТРОФІЗИЧНІ ВЛАСТИВОСТІ ПЛІВОК ЗАЛІЗА, ЛЕГОВАНИХ ВУГЛЕЦЕМ

Abstract

The effect of carbon doping of an iron nanofilm on the electrical properties of a metal- semiconductor system is considered. The object of study is a sample on a p-type and n-type semiconductor substrate with matrix of 16 contacts with a diameter of 2 mm and thickness 100 nm. Eight of which are pure iron and eight are carbon-doped iron. It is shown that when iron is doped with carbon on an n-type substrate, a rectifying contact such as a Schottky diode occurs. This is due to an increase in the work function and a decrease in the Fermi level in the studied system.