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  4. № 05 2001
  5. P. 36

Model of Oxide layer growth on Si3N4- and SiC-ceramics: heterogeneous crystallization of SiO2 with volume change

B.Halanov,
 
S.Ivanov,
 
V.Kartuzov,
 
R.I. Bugayenko
 

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Omeliana Pritsaka str.,3, Kyiv, 03142, Ukraine
Mathematical Models and Computing Experiment in Material Science - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2001, #05
http://www.materials.kiev.ua/article/69

Abstract


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