Synthesis of Double Silicon Carbide Titanium Ti3SiC2 under Isothermal Sintering

     
A.P.Polyshko,
  

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Krzhizhanovsky str., 3, Kyiv, 03142, Ukraine
Powder Metallurgy - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2012, #07/08
http://www.materials.kiev.ua/article/1061

Abstract

The synthesis of Ti3SiC2 in vacuum is studied. The influence of the starting powders, charge composition, and sintering temperature on the phase composition of the material is analyzed. It is established that titanium hydride used instead of metal titanium substantially decreases the onset synthesis temperature and produces almost single-phase material after sintering at 1200–1250 ºС. However, such Ti3SiC2 does not have adequate density and strength. Practically single-phase Ti3SiC2 with high density and strength is synthesized in the range 1350–1400 ºС when the silicon content of the charge is higher than its stoichiometric amount by a factor of 1.2–1.25. It is shown that single-phase Ti3SiC2 or material with the required TiC content can be synthesized by variation of silicon content of the charge.


COMPLEX CARBIDES, REFRACTORY COMPOUNDS, SINTERING