Synthesis of TiO2 films by CVD and their property

 
D.Danko,
 
A.N.Shlapak,
   

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Krzhizhanovsky str., 3, Kyiv, 03142, Ukraine
Electron Microscopy and Strength of Materials - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2008, #15
http://www.materials.kiev.ua/article/333

Abstract

The research of process of ТіО2 thin films synthesis by chemical vapor deposition is carried out. X-ray investigation have shown, that films synthesized at temperatures 500 оС and above are crystal and have rutile structure. Study of a charging condition of components of ТіО2 films by X-ray spectrum analysis method have shown, that a charging condition of Ti atoms in a TiO -Ni (Т of synthesis = 600 оС) sample is the same, as in pure ТіО2, and in a sample synthesized at 500 оС energy of connection Ті2р-electrons is a little bit less, hence specified sample contains a mix of ТіО2 and insignificant impurity non stoichiometric ТіО2. It is established, that temperature of synthesis influences for structure of a surface. Is shown, that the best photoelectrochemical properties have a film with rutile structure and advanced surface.


FILMS, PHOTOELECTROCHEMICAL PROPERTIES, SYNTHESIS OF TIO2, VAPOR DEPOSITION IS CARRIED OUT