Synthesis of TiO₂ films by CVD and their property

Abstract

The research of process of ТіО₂ thin films synthesis by chemical vapor deposition is carried out. X-ray investigation have shown, that films synthesized at temperatures 500 ^оС and above are crystal and have rutile structure. Study of a charging condition of components of ТіО₂ films by X-ray spectrum analysis method have shown, that a charging condition of Ti atoms in a TiO -Ni (Т of synthesis = 600 ^оС) sample is the same, as in pure ТіО₂, and in a sample synthesized at 500 ^оС energy of connection Ті2р-electrons is a little bit less, hence specified sample contains a mix of ТіО₂ and insignificant impurity non stoichiometric ТіО₂. It is established, that temperature of synthesis influences for structure of a surface. Is shown, that the best photoelectrochemical properties have a film with rutile structure and advanced surface.