High-Temperature and Electrochemical Oxidation of Thin NiSi and NiSi2 Films

 
V.Lavrenko,
 
V.Lavrenko,
   

I. M. Frantsevich Institute for Problems of Materials Science of the NAS of Ukraine, Krzhizhanovsky str., 3, Kyiv, 03142, Ukraine
Powder Metallurgy - Kiev: Frantsevich Institute for Problems of Materials Science NASU, 2013, #09/10
http://www.materials.kiev.ua/article/895

Abstract

High-temperature and anodic oxidation of thin NiSi and NiSi2 films produced by thermal annealing of Ni film on single-crystalline silicon is studied. Both high-temperature and anodic oxidation of thin NiSi and NiSi2 films leads to the formation of a thin protective SiO2 layers. High-temperature oxidation of NiSi films begins at 930 K, which is 100 К lower than that of NiSi2 films. When temperature increases, the weight increment of the NiSi films becomes greater than that of the NiSi2 films; this difference is three times as great at 1273 K, which is attributed to distinct structures and stoichiometry. It is shown that electrochemical corrosion resistance of the films increases as follows: Ni —> NiSi —> NiSi2.


ELECTROCHEMICAL OXIDATION, HIGH-TEMPERATURE OXIDATION, PROTECTIVE SIO2 LAYER, SILICIDE, THIN FILM